n.外延，外延生长；取向生长

原形：epitaxy复数：epitaxies

The epitaxial layer is grown on a single-crystal substrate.
该外延层生长在单晶基板上。
The process of epitaxy involves depositing a thin film of material onto a crystalline substrate.
外延过程涉及将薄层材料沉积到晶体基底上。
Epitaxy can be used to create high-quality semiconductor devices with precise control over the crystal structure and electrical properties.
外延可用于制造高质量半导体器件，对外延层的晶体结构和电学性质有精确控制。
In epitaxy, the deposited material has the same crystalline orientation as the substrate.
在外延过程中，沉积的材料与基板具有相同的结晶取向。
Epitaxial growth is typically performed at high temperatures using chemical vapor deposition or molecular beam epitaxy techniques.
外延生长通常在高温下使用化学气相沉积或分子束外延技术进行。
The use of epitaxy in semiconductor manufacturing has enabled the production of highly uniform and reproducible devices.
在半导体制造中使用外延工艺使得生产出高度均匀且可重现的器件成为可能。
Epitaxy can also be used to grow layers of materials with different bandgaps, allowing for the creation of heterostructures with tailored optical and electronic properties.
外延也可以用于生长不同带隙的材料层，从而可以创建具有定制光学和电子性质的异质结构。
The quality of an epitaxial layer is often evaluated by its surface morphology, crystal perfection, and electrical characteristics.
外延层的质量通常通过其表面形貌、晶体完整性以及电学特性来评估。
Epitaxy is a critical step in the fabrication of many advanced semiconductor devices, such as high electron mobility transistors (HEMTs) and optoelectronic devices.
外延是制造许多先进半导体器件的关键步骤，如高电子迁移率晶体管(HEMTs)和光电器件。
Researchers are constantly exploring new epitaxial techniques and materials to push the boundaries of what is possible in semiconductor technology.
研究人员不断探索新的外延技术和材料，以推动半导体技术的边界。